Normal incidence InAsÕAlxGa1ÀxAs quantum dot infrared photodetectors with undoped active region
نویسندگان
چکیده
We have performed a comprehensive investigation of n-type quantum dot infrared photodetectors ~QDIPs! based on InAs/GaAs epitaxical island quantum dots ~QDs! grown via the innovative punctuated island growth technique. The structural properties of the QDs were investigated with cross-sectional transmission electron microscopy and atomic force microscopy. The electronic properties of the QDs inserted in QDIP devices were investigated with photoluminescence ~PL!, PL excitation, and intraand inter-band photocurrent spectroscopy. The influence of AlGaAs layers inserted into the QDIP active regions on the performance of dark current and interand intra-band photocurrent was examined. Initial results on intra-band responsivity and detectivity of these QDIPs at 77 K with undoped active region show promise for application. © 2001 American Institute of Physics. @DOI: 10.1063/1.1356430#
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